Infineon BSS169H6327XTSA1 MOSFET 1 N-channel 0.36 W SOT 23

Infineon Technologies' BSS169H6327XTSA1 MOSFET is an N-channel unipolar transistor, housed in a compact SOT-23 package. This device leverages metal oxide semiconductor technology to achieve precise electronic switching and amplification functions typical of field effect transistors. It possesses a maximum power dissipation of 0.36 watts, making it suitable for low-power applications. The BSS169 is particularly valuable in scenarios where minimising power consumption is critical, such as in battery-operated equipment, signal processing, and other analogue circuit applications that require efficient voltage control through its gate and drain terminals. Its design facilitates usage in both depletion and saturation modes, offering versatility in a range of electronic designs.

Type	BSS169
Channels	1
Content	1
Enclosure	SOT 23
I(d)	0.17A
Mounting Type	Surface-mount
Power (max) P(TOT)	0.36W
Product Type	MOSFET
R(DS)(on)	12Ω