Infineon BSP315PH6327XTSA1 MOSFET 1 P-channel 1.8W SOT223

Infineon Technologies BSP315PH6327XTSA1 is a robust P-channel MOSFET meticulously engineered for effective switching and amplifying tasks in electronic circuits. Encapsulated in a compact SOT-223 package, this unipolar transistor features a maximum power dissipation of 1.8 watts, making it suitable for applications requiring efficient heat management and space-saving design. Its metal-oxide-semiconductor structure ensures low on-resistance and rapid switching speeds, which are essential for applications in power management systems, DC-DC converters, and signal processing. The device operates effectively in saturation and depletion modes, with precise control delivered through the gate terminal, making it a vital component in automotive, industrial, and consumer electronics where reliability and compact design are imperative.

Type	BSP315P
Channels	1
Content	1
Enclosure	SOT 223
I(d)	-1.17A
Mounting Type	Surface-mount
Power (max) P(TOT)	1.8W
Product Type	MOSFET
R(DS)(on)	0.8Ω