Infineon BSP170PH6327XTSA1 MOSFET 1 P-channel 1.8W SOT 223

Infineon Technologies presents the BSP170PH6327XTSA1 MOSFET, a component designed with precision to meet the demands of modern electronic engineering. This P-channel MOSFET is characterised by its compact SOT-223 package, offering a power dissipation of 1.8 watts, making it suitable for use in a range of low to medium power applications. As a metal-oxide-semiconductor field-effect transistor (MOSFET), it utilises the unipolar nature inherent to this technology, providing efficient switching with low gate drive requirements. Engineers often employ this MOSFET in various applications, including power management, signal switching, and amplifying circuits, where the control of current via the gate terminal allows for high-speed operation and efficiency. Its specific design caters to both depletion and saturation operational modes, ensuring robust performance across different operating conditions.

Type	BSP170P
Channels	1
Content	1
Enclosure	SOT 223
I(d)	-1.90A
Mounting Type	Surface-mount
Power (max) P(TOT)	1.8W
Product Type	MOSFET
R(DS)(on)	0.3Ω