Low power transistor with epitaxial silicon construction, suitable for switching applications.
- NPN polarity
- Collector emitter breakdown voltage 30V
- Collector base breakdown voltage 30V
- Collector current 100mA
- Power 0.5W
- Transition frequency 300MHz
- TO-92 case
| Case |
TO-92 |
| Collector Current Cont. |
0.1A |
| Collector-Emitter Voltage |
30V |
| DC Current Gain (max.) |
800 |
| Operating Temperature |
-55 to +150°C |
| Power Dissipation |
0.625W |
| Transition Frequency |
300MHz |
| Type |
BC549B |
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- ROHS : Compliant
- ROHS : Exempt
- ROHS : Non Compliant
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