This 1.3W N-channel power MOSFET provides the best combination of fast switching, ruggedised device design, low on-resistance and cost-effectiveness. The MOSFET is supplied in a 4-pin HVMDIP package that is machine-insertable and can be stacked in multiple combinations on standard 0.1in pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.
- VDSS 100V
- RDS(on) 0.54Ω
- ID 1A
- Dynamic dv/dt rating
- Repetitive avalanche rated
- End stackable
- 175°C Operating temperature
- Fast switching
- Ease of paralleling
Note: Previously manufactured under the International Rectifier name.
This product is subject to a part change notification. Please refer to the PCN.To find out more about our range of Vishay resistors, diodes, capacitors and switches, please visit our Vishay brand page.
| Type |
MOSFET |
| Channel Type |
N-Channel |
| Drain Current |
1A |
| Package Type |
HEXDIP |
| Gate Source Voltage |
20V |
| Drain-Source Breakdown Voltage |
100V |
| Drain-Source On-Resistance |
0.54Ω |
| Power Dissipation |
1.3W |