Infineon Technologies IRF7842TRPBF MOSFET N-channel 2.5W SO-8

Infineon Technologies IRF7842TRPBF is an N-channel MOSFET designed for high-efficiency power conversion and amplification applications. This metal-oxide-semiconductor field-effect transistor is housed in an SO-8 package, contributing to optimal thermal performance and ensuring efficient power handling with a power dissipation of 2.5 watts. The device is engineered to provide low on-state resistance, facilitating reduced power loss and improved switching speeds, which makes it highly suitable for DC-DC converters, motor control, and power management systems. Its robust design and performance attributes make it an ideal choice for use in various industrial and commercial applications where high current and voltage management are critical. Additionally, the device's construction includes advanced silicon gate technology that enhances conductivity and reliability in demanding environments.

Type	IRF7842PBF-GURT