A 16.5A 100V P-Channel enhancement mode power QFET MOSFET is especially designed to reduce ON-state resistance, provide high avalanche energy strength and superior switching performance. The device is ideal for switched mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
- TO-220 Package
- Low gate charge
- Low Crss
- 100% Avalanche tested
- 175°C Junction temperature rating
Please refer to the
Product Change Notice (PCN) for this device.
Channel Type |
P-Channel |
Drain Current |
16.5A |
Drain-Source Breakdown Voltage |
100V |
Drain-Source On-Resistance |
0.14Ω |
Gate Source Voltage |
30V |
Package/Case |
TO-220 |
Power Dissipation |
100W |
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