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NXP 2N7002GEG-HSMD N-Channel Trench MOSFET 60V SOT-23

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Brand: NXP  MPN: 2N7002GEG-HSMD 
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3,552 available to back OrderStandard factory lead time 9 days

A surface mounting N-channel enhancement mode FET suitable for logic level gate drive sources, logic level translators and high speed line drivers.

  • Uses Trench MOSFET technology
  • Very fast switching
  • SOT-23 SMD package
Channel Type N-Channel
Drain Current 0.3A
Drain-Source Breakdown Voltage 60V
Drain-Source On-Resistance
Gate Source Voltage 30V
Package/Case SOT-23
Power Dissipation 0.83W

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