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NXP 2N7002GEG-HSMD N-Channel Trench MOSFET 60V SOT-23

Order Code:  

63-0956

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Brand: NXP  Copy to clipboard MPN: 2N7002GEG-HSMD  Copy to clipboard
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Qty Unit Price (Ex VAT)
100+ £0.037
500+ £0.034
1000+ £0.033

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Order in multiples of 10
Standard factory lead time 9 days
4,345 available to back OrderBack-order availability date - 28/04/2024

A surface mounting N-channel enhancement mode FET suitable for logic level gate drive sources, logic level translators and high speed line drivers.


  • Uses Trench MOSFET technology
  • Very fast switching
  • SOT-23 SMD package
Channel Type N-Channel
Drain Current 0.3A
Drain-Source Breakdown Voltage 60V
Drain-Source On-Resistance
Gate Source Voltage 30V
Package/Case SOT-23
Power Dissipation 0.83W

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