Power MOSFET, N-Channel type, 75V drain-source breakdown voltage, 0.011R drain-source on-resistance, 80A drain current, 20V gate source voltage, 300W power, TO-220AB case, repetitive avalanche rated, fast switching, ease of paralleling, simple drive requirements, designed for low voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
| Channel Type |
N-Channel |
| Drain Current |
80A |
| Drain-Source Breakdown Voltage |
75V |
| Drain-Source On-Resistance |
0.011Ω |
| Gate Source Voltage |
20V |
| Package/Case |
TO-220AB |
| Power Dissipation |
300W |
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- ROHS : Compliant
- ROHS : Exempt
- ROHS : Non Compliant
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