On Semiconductor MPSA13G Darlington NPN 30V 0.5A TO92B

Darlington transistor, NPN polarity, 30V collector emitter voltage (vceo), 30V Collector-Base voltage (vcbo), 10V Emitter-Base voltage (veb), 1.2A collector current, 625mW power, 10000 DC current gain (hfe), 100nA collector cut-off current, 1.5V Collector-Emitter saturation voltage, 125MHz transition frequency, TO-92 case, bulk, this device is designed for applications requiring extremely high current gain at collector currents to 1A.

Type	NPN
Emitter-Base Voltage (Veb)	10V
DC Current Gain (hfe)	10000
Power Dissipation	625mW
Collector Current (Ic)	1.2A
Collector-Base Voltage (Vcb)	30V
Package/Case	TO-92