Low power transistor with epitaxial silicon construction, suitable for switching applications.
- NPN polarity
- Collector emitter breakdown voltage 30V
- Collector base breakdown voltage 30V
- Collector current 100mA
- Power 0.5W
- Transition frequency 300MHz
- TO-92 case
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- ROHS : Compliant
- ROHS : Exempt
- ROHS : Non Compliant
Available for re-reeling
Unfortunately re-reeling is not available at the present time for this item as the required quantity is greater than the available stock.
Re-reeling orders placed after 16:30 will be processed the next working day.
Unfortunately re-reeling is not available at the present time for this item.
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This product will not be replenished, however, you may buy the remaining stock.
