Very Fast PowerMESH IGBT, N-Channel Type, 600V Collector-emitter Breakdown Voltage, 1.85V Collector-emitter Saturation Voltage, 5.75V Gate Threshold Voltage, 10A Collector Current, 25W Power, -55°C to +150°C, 8.5ns Rise Time, 60ns Fall Time, TO-220FP Case, Lower On-voltage Drop, Off Losses Include Tail Current, Losses Include Diode Recovery Energy, High Frequency Operation up to 70kHz, Very Soft Ultra Fast Recovery Anti-parallel Diode, Suitable for High Frequency Applications, Supplied in Tube
|
|