PowerMESH IGBT, N Channel Type, 1200V Collector-emitter Breakdown Voltage, 2.3V Collector-emitter Saturation Voltage, 5V Gate Threshold Voltage, 3A Collector Current, 25W Power, -55°C to +150°C, 3.5ns Rise Time, 250ns Fall Time, TO-220FP Case, Permitting Higher Levels, High Speed, Low On-voltage Drop, High Current Capability, Off-losses Include Tail Current, Suitable for High Frequency Applications, Supplied in Tube
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