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| 20th November 2008
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Electronic Components
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Discrete Semiconductors
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Suppression Diodes
>
SiBOD protectors
SiBOD protectors
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The SiBOD (silicon breakover diode) is a four layer thyristor based bi-directional protector.
Designed for telecommunications and similar applications
The gate function is achieved by an internal current controlled mechanism
It has a greater capacity for diverting surge currents when compared to an avalanche transient voltage suppressor device
When the transient current passing through the device rises to the IBO level, the device enters a fully conductive state, with only a few volts (V
T
) across the device. In this state, the device will conduct high currents without damage
The device automatically resets when the current falls below a holding current (I
H
)
Available in 1.7W and 5W versions
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Order Here
Exc. Vat
Inc. Vat
Unit of Sale
Each (1)
Description
Order Code
Price
Qty
T10A220B SIBOD NON ROHS
47-4032
Was 0.20
NOW 0.10
T10B180B SIBOD NON ROHS
47-4034
Was 0.20
NOW 0.10
T10B220B SIBOD NON ROHS
47-4036
Was 0.40
NOW 0.20
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Technical Specification
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Device
Vrm
IRM
Vbr
Vbo
Vt typ
ibo typ
Ih min
Power
Ipp
V
µA
V min
V max
V @ 1A
mA
mA
W
A
T10A220B
220
1
214
265
4
50
120
1.7
100
T10B180B
170
1
180
210
4
50
120
5
250
T10B220B
220
1
214
265
4
50
120
5
250
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