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These IGBTs have been designed, using the latest technology, for high frequency applications.
A new electron irradiation technique and the utilisation of a new lifetime control system has been used to optimise device performance, permitting higher levels of performance, in particular reducing off-losses and realising the best trade-off between on-state voltage and switching energy losses.
Good switching performance and low voltage drop, and the addition of a co-packaged damping diode make this device ideal for lamp ballasts, industrial power supplies, domestic appliances and for horizontal deflection in CRTs.
- High speed
- Low on-voltage drop
- High current capability
- Off-losses include tail current
- Housed in an industry standard TO-220FP package
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| VBR(CES) | VCE(SAT) | VGE(th) | IC | ICM(PULSED) | PTOT | EOFF | Rise | Fall | | | typ. | max. | | | | | time | time | | | 600V | 1.85 [2] | 5.75 | 6A | 50A | 25W | 215µJ | 7ns | 105ns | | | 1200V | 2.3V [1] | 5V | 3A | 10A | 25W | 620µJ | 4ns | 470ns | | | [1] @VGE=15V, IC=3A | | | | | | | | [2] @VGE=15V, IC=7A | | |
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