General Purpose Transistor, NPN Polarity, 30V Collector Emitter Breakdown Voltage, 30V Collector Base Breakdown Voltage, 100mA Collector Current, 225mW Power, 220 DC Current Gain, 100MHz Transition frequency, SOT-23 Case, Epitaxial Planar Construction, Designed for Switching and AF Amplifier Amplification, Suitable for Automatic Insertion in Thick and Thin-film Circuits
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